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MOSFET, TK3R2A10PL, N-CH, 100V 100A, TO-220SIS
Description
Applications
• High-Efficiency DC-DC Converters
• Switching Voltage Regulators
• Motor Drivers
Features
(1) High-speed switching
(2) Small gate charge: QSW = 48 nC (typ.)
(3) Small output charge: Qoss = 164 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V)
(5) Low leakage current: IDSS = 10µA (max) (VDS = 100 V)
(6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA)
Specification
Channel Type: N Channel
Drain Source Voltage Vds: 100V
Continuous Drain Current Id: 106A
Drain Source On State Resistance: 0.0026ohm
Transistor Case Style: TO-220SIS
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Gate Source Threshold Voltage Max: 2.5V
Power Dissipation: 54W
No. of Pins: 3Pins
Operating Temperature Max: 175°C