POWER MOSFET, HY3410P, N-CH, 100V 140A

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PID# 71414

4,00 CA$
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Description

Type Designator: HY3410P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 285 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 140 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 130 nC

Rise Time (tr): 39 nS

Drain-Source Capacitance (Cd): 943 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0075 Ohm

Package: TO220FB

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