MOSFET, HY3312P, N-CHANNEL, 125V 130A, 7.7mOHM RDS

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PID# 71053

4,00 CA$
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Description

Type Designator: HY3312P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 278 W

Maximum Drain-Source Voltage |Vds|: 125 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 130 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 130 nC

Rise Time (tr): 39 nS

Drain-Source Capacitance (Cd): 940 pF

Maximum Drain-Source On-State Resistance (Rds): 0.009 Ohm

Datasheet

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