TRANSISTOR, EPITAXIAL SILICON, KSC2073, NPN, 150V, 1.5A

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PID# 160520

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Variants:
PNP
NPN
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Description

  • Package / Case: TO-220-3
  • Transistor Polarity: NPN
  • Configuration: Single
  • Collector- Emitter Voltage VCEO Max: 150 V
  • Collector- Base Voltage VCBO: 150 V
  • Emitter- Base Voltage VEBO: 5 V
  • Collector-Emitter Saturation Voltage: 1 V
  • Maximum DC Collector Current: 1.5 A
  • Pd - Power Dissipation: 25 W
  • Gain Bandwidth Product fT: 4 MHz
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 150 C
  • Continuous Collector Current: 1.5 A
  • DC Collector/Base Gain hfe Min: 40
  • DC Current Gain hFE Max: 140
  • Height: 9.4 mm
  • Length: 10.1 mm
  • Product Type: BJTs - Bipolar Transistors
  • Technology: Si
  • Width: 4.7 mm
  • Unit Weight: 2.270 g

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