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FRAM is non-volatile and can be easily read/written 10 trillion times.
It is similar to dynamic random access memory (DRAM), only with a ferroelectric layer instead of a dielectric layer.
It is particularly suitable for use with low power data loggers and for buffering data when a stable voltage source is not available.
The FRAM chips used provide 32KB of memory and use clocks up to 20 MHz.
Each byte can be read and written instantly, yet the memory can be preserved for many years at room temperature.
Specification:
Address: 1010+A2+A1+A0
Default value: 0 x 50
VCC/Logic: 2.7-5.5V