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TRANSISTOR, EPITAXIAL SILICON, KSA940, PNP, -150V, -1.5A
PID# 160521
2,50 CA$
Description
- Package / Case: TO-220-3
- Transistor Polarity: PNP
- Configuration: Single
- Collector- Emitter Voltage VCEO Max: 150 V
- Collector- Base Voltage VCBO: 150 V
- Emitter- Base Voltage VEBO: 5 V
- Collector-Emitter Saturation Voltage: 1.5 V
- Maximum DC Collector Current: 1.5 A
- Pd - Power Dissipation: 1.5 W
- Gain Bandwidth Product fT: 4 MHz
- Minimum Operating Temperature: - 55 C
- Maximum Operating Temperature: + 150 C
- Series: KSA940
- Continuous Collector Current: - 1.5 A
- DC Collector/Base Gain hfe Min: 40
- DC Current Gain hFE Max: 140
- Height: 9.4 mm
- Length: 10.1 mm
- Product Type: BJTs - Bipolar Transistors
- Subcategory: Transistors
- Technology: Si
- Width: 4.7 mm
- Unit Weight: 0.063493 oz